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Now we use two of the equations ( and ) that we found in the discussion about MOS Regimes to calculate a set of and values for various value of . (Note that must be greater than for the two equations to be valid.) When we get the numbers, we build a little table.
Once we have the numbers , then we sketch a piece of graph paper with the proper scale, and plot the points on it. Once the , points have been determined, it is easy to sketch in the I-V behavior. You just draw a curve fromthe origin up to any given point, having it "peak out" just at the dot, and then draw a straight line at to finish things off. One such curve is shown in . And then finally in they are all sketched in. Your curves probably wont be exactly right but they will be good enough for a lot ofapplications.
3 | 1 | 0.44 |
4 | 2 | 1.76 |
5 | 3 | 3.96 |
6 | 4 | 7.04 |
7 | 5 | 11 |
There is a particularly easy way to measure by and for a MOSFET. Let's first introduce the schematic symbol for the MOSFET, it looks like . Let's take a MOSFET and hook it up as shown in .
Since the gate of this transistor is connected to the drain, there is no doubt that is less than . In fact, since , their difference, is zero. Thus, for any value of , this transistor is operating in its saturated condition. Since , we can rewrite a previous equation derived equation from the section on MOS transistor as
Now let's take the square root of both sides:
So if we make a plot of as a function of , we should get a straight line, with a slope of and an x-intercept of .
Because of the expected non-ideality, the curve does not go all the way to , but deviates a bit near the bottom. A simple linear extrapolation of the straight part of the plothowever, yields an unambiguous value for the threshold voltage .
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