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Table.1.26.Properties of Elemental&Binary Compound Semiconductors at 300K.
Semiconductor | Lattice Constant( a A° ) | BandGap (E g eV) | Band a | Mobility b (cm 2 /V-s) | DielectricConstant | |
Elemental | μ n | μ p | ε r | |||
Ge | 5.64 | 0.66 | I | 3900 | 1900 | 16.0 |
Si | 5.43 | 1.12 | I | 1450 | 450 | 11.9 |
IV-IV | ||||||
SiC c | 3.08 | 2.99 | I | 400 | 50 | 10.0 |
III-V | ||||||
AlSb | 6.13 | 1.58 | I | 200 | 420 | 14.4 |
GaAs | 5.63 | 1.42 | D | 8500 | 400 | 13.1 |
GaP | 5.45 | 2.26 | I | 110 | 75 | 11.1 |
GaSb | 6.09 | 0.72 | D | 5000 | 850 | 15.7 |
InAs | 6.05 | 0.36 | D | 33000 | 460 | 14.6 |
InP | 5.86 | 1.35 | D | 4600 | 150 | 12.4 |
InSb | 6.47 | 0.17 | D | 80000 | 1250 | 17.7 |
II-VI | ||||||
CdS | 5.83 | 2.42 | D | 340 | 50 | 5.4 |
CdTe | 6.48 | 1.56 | D | 1050 | 100 | 10.2 |
ZnO | 4.58 | 3.35 | D | 200 | 180 | 9.0 |
ZnS | 5.42 | 3.68 | D | 165 | 5 | 5.2 |
IV-VI | ||||||
PbS | 5.93 | 0.41 | I | 600 | 700 | 17.0 |
PbTe | 6.46 | 0.31 | I | 6000 | 4000 | 30.0 |
a I = Indirect, D = Direct;
b The values are for drift mobilities obtained in the purest and the most perfect materials available to date;
c Silicon Carbide crystallizes in the wurtzite structure.( Physics of Semiconductor Devices, S.M.Sze, 2 nd Edition, Wiley, New York, 1981.
1.11.6. BASIC CRYSTAL STRUCTURES.
The elemental semiconductors, Ge and Si, crystallize as diamond structure and most of the compound semiconductors crystallize as Zinc-Blende structure. These are variants of cubic structures.
We have three basic cubic structures: simple cube, body centered cube (bcc) and face centered cube (fcc). The side of a cube ‘a’ is known as lattice constant. The three parameters that characterize a cubic unit cell are : coordination number, the packing fraction and the nearest neighbor distance.
Polonium crystallizes as simple cube.
Sodium and Tungsten crystallize as Body Centered Cube(bcc).
Aluminum, copper, gold and platinum crystallize as Face Centered Cube(fcc) .
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