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Unit cell structure of a zinc blende (ZnS) lattice. Zinc atoms are shown in green (small), sulfur atoms shown in red (large), and the dashed lines show the unit cell.
Unit cell structure of a wurtzite lattice. Zinc atoms are shown in green (small), sulfur atoms shown in red (large), and the dashed lines show the unit cell.
Lattice parameters and densities (measured at 298 K) for the III-V (13-15) compound semiconductors. Estimated standard deviations given in parentheses.
Compound Structure Lattice parameter (Å) Density (g/cm 3 )
AlN wurtzite a = 3.11(1), c = 4.98(1) 3.255
AlP zinc blende a = 5.4635(4) 2.40(1)
AlAs zinc blende a = 5.660 3.760
AlSb zinc blende a = 6.1355(1) 4.26
GaN wurtzite a = 3.190, c = 5.187
GaP zinc blende a = 5.4505(2) 4.138
GaAs zinc blende a = 5.65325(2) 5.3176(3)
InN wurtzite a = 3.5446, c = 5.7034 6.81
InP zinc blende a = 5.868(1) 4.81
InAs zinc blende a = 6.0583 5.667
InSb zinc blende a = 6.47937 5.7747(4)
Temperature dependence of the lattice parameter for stoichiometric GaAs and crystals with either Ga or As excess.

The homogeneity of structures of alloys for a wide range of solid solutions to be formed between III-V compounds in almost any combination. Two classes of ternary alloys are formed: III x -III 1-x -V (e.g., Al x -Ga 1-x -As) and III-V 1-x -V x (e.g., Ga-As 1-x -P x ) . While quaternary alloys of the type III x -III 1-x -V y -V 1-y allow for the growth of materials with similar lattice parameters, but a broad range of band gaps. A very important ternary alloy, especially in optoelectronic applications, is Al x -Ga 1-x -As and its lattice parameter ( a ) is directly related to the composition (x).

a = 5.6533 + 0.0078 x

Not all of the III-V compounds have well characterized high-pressure phases. however, in each case where a high-pressure phase is observed the coordination number of both the group III and group V element increases from four to six. Thus, AlP undergoes a zinc blende to rock salt transformation at high pressure above 170 kbar, while AlSb and GaAs form orthorhombic distorted rock salt structures above 77 and 172 kbar, respectively. An orthorhombic structure is proposed for the high-pressure form of InP (>133 kbar). Indium arsenide (InAs) undergoes two-phase transformations. The zinc blende structure is converted to a rock salt structure above 77 kbar, which in turn forms a β-tin structure above 170 kbar.

Group ii-vi (12-16) compounds

The structures of the II-VI compound semiconductors are less predictable than those of the III-V compounds (above), and while zinc blende structure exists for almost all of the compounds there is a stronger tendency towards the hexagonal wurtzite form. In several cases the zinc blende structure is observed under ambient conditions, but may be converted to the wurtzite form upon heating. In general the wurtzite form predominates with the smaller anions (e.g., oxides), while the zinc blende becomes the more stable phase for the larger anions (e.g., tellurides). One exception is mercury sulfide (HgS) that is the archetype for the trigonal cinnabar phase. [link] lists the stable phase of the chalcogenides of zinc, cadmium and mercury, along with their high temperature phases where applicable. Solid solutions of the II-VI compounds are not as easily formed as for the III-V compounds; however, two important examples are ZnS x Se 1-x and Cd x Hg 1-x Te.

Questions & Answers

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Source:  OpenStax, Chemistry of electronic materials. OpenStax CNX. Aug 09, 2011 Download for free at http://cnx.org/content/col10719/1.9
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