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It turns out that each band has exactly 2 N allowed states in it, where N is the total number of atoms in the particular crystal sample we are talking about. (Since there are 10 cups in eachband in the figure, it must represent a crystal with just 5 atoms in it. Not a very big crystal at all!) Into these bandswe must now distribute all of the valence electrons associated with the atoms, with the restriction that we can only put one electron into each allowed state . (This is the result of something called the Pauli exclusion principle .) Since in the case of silicon there are 4 valence electrons per atom, we would just fill up the first two bands, and the next would be empty. (If we make the logical assumption that the electrons will fill inthe levels with the lowest energy first, and only go into higher lying levels if the ones below are already filled.) Thissituation is shown in .

Here, we have represented electrons as small black balls with a "-" sign on them. Indeed, the first two bands are completelyfull, and the next is empty. What will happen if we apply an electric field to the sample of silicon? Remember the diagramwe have at hand right now is an energy based one, we are showing how the electrons are distributed in energy, not how they are arranged spatially. On this diagram wecan not show how they will move about, but only how they will change their energy as a result of the applied field. Theelectric field will exert a force on the electrons and attempt to accelerate them. If the electrons are accelerated, then theymust increase their kinetic energy. Unfortunately, there are no empty allowed states in either of the filled bands. An electronwould have to jump all the way up into the next (empty) band in order to take on more energy. In silicon, the gap between thetop of the highest most occupied band and the lowest unoccupied band is 1.1 eV.(One eV is the potential energy gained by an electron moving across an electrical potential of one volt.)The mean free path or distance over which an electron would normally move before it suffers acollision is only a few hundred angstroms ( 300 10 -8 cm) and so you would need a very large electric field (several hundred thousand volts cm ) in order for the electron to pick up enough energy to "jump the gap". This makes it appear that silicon would be avery bad conductor of electricity, and in fact, very pure silicon is very poor electrical conductor.

Silicon, with first two bands full and the next empty
A metal is an element with an odd number of valence electrons so that a metal ends up with an upper bandwhich is just half full of electrons. This is illustrated in . Here we see that one band is full, and the next is just half full. This would be the situation for theGroup III element aluminum for instance. If we apply an electric field to these carriers, those near the top of thedistribution can indeed move into higher energy levels by acquiring some kinetic energy of motion, and easily move fromone place to the next. In reality, the whole situation is a bit more complex than we have shown here, but this is not too farfrom how it actually works.
Electron distribution for a metal or good conductor
So, back to our silicon sample. If there are no places for electrons to "move" into, then how does silicon work as a"semiconductor"? Well, in the first place, it turns out that not all of the electrons are in the bottom two bands. Insilicon, unlike say quartz or diamond, the band gap between the top-most full band, the next empty one is not so large. As wementioned above it is only about 1.1 eV. So long as the silicon is not at absolute zero temperature, some electrons near the topof the full band can acquire enough thermal energy that they can "hop" the gap, and end up in the upper band, called the conduction band . This situation is shown in .
Thermal excitation of electrons across the band gap
In silicon at room temperature, roughly 10 10 electrons per cubic centimeter are thermally excited across the band-gap at any one time. It should be noted thatthe excitation process is a continuous one. Electrons are being excited across the band, but then they fall back down into emptyspots in the lower band. On average however, the 10 10 in each cm 3 of silicon is what you will find at any given instant. Now 10 billion electrons per cubic centimeter seems like a lot of electrons, but lets do a simple calculation. The mobility of electrons in silicon isabout 1000 cm 2 volt-sec . Remember, mobility times electric field yields the average velocity of the carriers. Electric field has units of volts cm , so with these units we get velocity in cm sec as we should.) The charge on an electron is 1.6 10 -19 coulombs. Thus from this equation :
σ n q μ 10 10 1.6 10 -19 1000 1.6 10 -6 mhos cm
If we have a sample of silicon 1 cm long by 1 mm 1 mm square, it would have a resistance of
R L σ A 1 1.6 10 -6 0.1 2 62.5 MΩ
which does not make it much of a "conductor". In fact, if this were all there was to the silicon story, we could pack up andmove on, because at any reasonable temperature, silicon would conduct electricity very poorly.

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Source:  OpenStax, Introduction to physical electronics. OpenStax CNX. Sep 17, 2007 Download for free at http://cnx.org/content/col10114/1.4
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